| PART |
Description |
Maker |
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FDMS3006SDC |
N-Channel Dual CoolTM Power Trench? SyncFETTM 30 V, 49 A, 1.9 mΩ
|
Fairchild Semiconductor
|
| FDMS86500DC |
N-Channel Dual CoolTM Power Trench? MOSFET 60 V, 108 A, 2.3 mΩ
|
Fairchild Semiconductor
|
| FDB86360-F085 FDB86360F085 |
N-Channel Power Trench MOSFET 80V, 110A, 1.8mOhms
N-Channel Power Trench? MOSFET
|
Fairchild Semiconductor
|
| IDT7134LA70P IDT7134LA70PB IDT7134SA35C IDT7134SA3 |
150V N-Channel UltraFET Trench MOSFET
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM 4K X 8 DUAL-PORT SRAM, 25 ns, PQCC52
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM 4K X 8 DUAL-PORT SRAM, 35 ns, PQCC52
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM 4K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
250V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
FTDI232BM, USB-RS232, 32-LQFP SMT
30V Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package; Package: SO-14; No of Pins: 14; Container: Tape & Reel
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| STP4931 |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| PMDPB80XP |
20 V, dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB85UPE |
20 V dual P-channel Trench MOSFET
|
NXP Semiconductors
|
| PMDPB30XN |
20 V, dual N-channel Trench MOSFET
|
NXP Semiconductors
|
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